Samsung 980 PRO 500GB SSD PCIe 4.0 NVMe
NAND FLASH | Performance | ||
Manufacturer: | Samsung | Sequential Read: | 6,400 MB/s |
Name: | V-NAND V6 | Sequential Write: | 5,000 MB/s |
Rebranded: | Samsung V6 V-NAND | Random Read: | 800,000 IOPS |
Type: | TLC | Random Write: | 1,000,000 IOPS |
Technology: | 128-layer | Endurance: | 300 TBW |
Speed: | 800 MT/s .. 1200 MT/s | Warranty: | 5 Years |
Capacity: | 2 chips @ 2 Tbit | MTBF: | 1.5 Million Hours |
Toggle: | 4 | Drive Writes Per Day (DWPD): | 0.3 |
Topology: | Floating Gate | SLC Write Cache: | approx. 94 GB (90 GB Dynamic + 4 GB Static) |
Dies per Chip: | 8 dies @ 256 Gbit | Speed when Cache Exhausted: | approx. 1150 MB/s |
Planes per Die: | 2 | Cache Folding Speed: | 900 MB/s |
Decks per Die: | 1 | Controller | |
Word Lines: | 136 per NAND String 94.1% | Manufacturer: | Samsung |
Read Time (tR): | 45 µs | Name: | Elpis (S4LV003) |
Program Time (tProg): | 400 µs | Architecture: | ARM 32-bit Cortex-R5 |
Block Erase Time (tBERS): | 3.5 ms | Foundry: | Samsung |
Programming Throughput: | 84 MB/s | Flash Channels: | 8@ 1,200 MT/s |
Page Size: | 16 KB | Core Count: | 5-Core |
Process: | 8 nm | ||
Chip Enables: | 8 | ||
Controller Features: | DRAM (enabled) | ||
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