SAMSUNG EVO 870 250GB SSD
| NAND Flash | Performance | |||
| Manufacturer: | Samsung | Sequential Read: | 560 MB/s | |
| Name: | V-NAND V6 | Sequential Write: | 530 MB/s | |
| Type: | TLC | Random Read: | 98,000 IOPS | |
| Technology: | 128-layer | Random Write: | 88,000 IOPS | |
| Speed: | 800 MT/s .. 1200 MT/s | Endurance: | 150 TBW | |
| Capacity: | 1 chip @ 2 Tbit | Warranty: | 5 Years | |
| Toggle: | 4 | MTBF: | 1.5 Million Hours | |
| Topology: | Floating Gate | Drive Writes Per Day (DWPD): | 0.3 | |
| Dies per Chip: | 8 dies @ 256 Gbit | Controller | ||
| Planes per Die: | 2 | Manufacturer: | Samsung | |
| Decks per Die: | 1 | Name: | MKX (Metis S4LR059) | |
| Word Lines: | 136 per NAND String 94.1% Vertical Efficiency | Architecture: | ARM 32-bit | |
| Read Time (tR): | 45 µs | Foundry: | Samsung | |
| Program Time (tProg): | 400 µs | Flash Channels: | 8 | |
| Block Erase Time (tBERS): | 3.5 ms | Core Count: | Triple-Core | |
| Programming Throughput: | 84 MB/s | Chip Enables: | 8 | |
| Page Size: | 16 KB | |||
Reviews
There are no reviews yet.