SAMSUNG EVO 870 250GB SSD
NAND Flash | Performance | |||
Manufacturer: | Samsung | Sequential Read: | 560 MB/s | |
Name: | V-NAND V6 | Sequential Write: | 530 MB/s | |
Type: | TLC | Random Read: | 98,000 IOPS | |
Technology: | 128-layer | Random Write: | 88,000 IOPS | |
Speed: | 800 MT/s .. 1200 MT/s | Endurance: | 150 TBW | |
Capacity: | 1 chip @ 2 Tbit | Warranty: | 5 Years | |
Toggle: | 4 | MTBF: | 1.5 Million Hours | |
Topology: | Floating Gate | Drive Writes Per Day (DWPD): | 0.3 | |
Dies per Chip: | 8 dies @ 256 Gbit | Controller | ||
Planes per Die: | 2 | Manufacturer: | Samsung | |
Decks per Die: | 1 | Name: | MKX (Metis S4LR059) | |
Word Lines: | 136 per NAND String 94.1% Vertical Efficiency | Architecture: | ARM 32-bit | |
Read Time (tR): | 45 µs | Foundry: | Samsung | |
Program Time (tProg): | 400 µs | Flash Channels: | 8 | |
Block Erase Time (tBERS): | 3.5 ms | Core Count: | Triple-Core | |
Programming Throughput: | 84 MB/s | Chip Enables: | 8 | |
Page Size: | 16 KB | |||
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