Lexar NS100 256 GB
NAND Flash | Performance | |||
Manufacturer: | Micron | Sequential Read: | 520 MB/s | |
Name: | B16A FortisFlash | Sequential Write: | 520 MB/s | |
Rebranded: | TS7512G181 (Rebranded by Lexar) | Random Read: | Unknown | |
Type: | TLC | Random Write: | Unknown | |
Technology: | 64-layer | Endurance: | 128 TBW | |
Speed: | 533 MT/s .. 667 MT/s | MTBF: | 1.5 Million Hours | |
Capacity: | 4 chips @ 512 Gbit | Drive Writes Per Day (DWPD): | 0.5 | |
ONFI: | 4 | SLC Write Cache: | Yes | |
Topology: | Floating Gate | Controller | ||
Process: | 20 nm | Manufacturer: | Marvell | |
Die Size: | 58 mm² (4.4 Gbit/mm²) | Name: | 88NV1120 | |
Dies per Chip: | 2 dies @ 256 Gbit | Architecture: | ARM 32-bit Cortex-R5 | |
Planes per Die: | 2 | Foundry: | TSMC | |
Decks per Die: | 2 | Flash Channels: | 2 | |
Word Lines: | 74 per NAND String 86.5% Vertical Efficiency | Core Count: | Dual-Core | |
Read Time (tR): | 78 µs | Process: | 28 nm | |
Program Time (tProg): | 820 µs | |||
Block Erase Time (tBERS): | 15 ms | |||
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