Lexar NS100 256 GB
| NAND Flash | Performance | |||
| Manufacturer: | Micron | Sequential Read: | 520 MB/s | |
| Name: | B16A FortisFlash | Sequential Write: | 520 MB/s | |
| Rebranded: | TS7512G181 (Rebranded by Lexar) | Random Read: | Unknown | |
| Type: | TLC | Random Write: | Unknown | |
| Technology: | 64-layer | Endurance: | 128 TBW | |
| Speed: | 533 MT/s .. 667 MT/s | MTBF: | 1.5 Million Hours | |
| Capacity: | 4 chips @ 512 Gbit | Drive Writes Per Day (DWPD): | 0.5 | |
| ONFI: | 4 | SLC Write Cache: | Yes | |
| Topology: | Floating Gate | Controller | ||
| Process: | 20 nm | Manufacturer: | Marvell | |
| Die Size: | 58 mm² (4.4 Gbit/mm²) | Name: | 88NV1120 | |
| Dies per Chip: | 2 dies @ 256 Gbit | Architecture: | ARM 32-bit Cortex-R5 | |
| Planes per Die: | 2 | Foundry: | TSMC | |
| Decks per Die: | 2 | Flash Channels: | 2 | |
| Word Lines: | 74 per NAND String 86.5% Vertical Efficiency | Core Count: | Dual-Core | |
| Read Time (tR): | 78 µs | Process: | 28 nm | |
| Program Time (tProg): | 820 µs | |||
| Block Erase Time (tBERS): | 15 ms | |||
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