Lexar NM620 256 GB
| NAND Flash | Performance | |||
| Manufacturer: | Micron | Sequential Read: | 3,300 MB/s | |
| Name: | B27B FortisFlash | Sequential Write: | 1,300 MB/s | |
| Type: | TLC | Random Read: | 92,000 IOPS | |
| Technology: | 96-layer | Random Write: | 240,000 IOPS | |
| Speed: | 533 MT/s .. 1200 MT/s | Endurance: | 125 TBW | |
| Capacity: | 2 chips @ 1 Tbit | Warranty: | 5 Years | |
| ONFI: | 4.1 | MTBF: | 1.5 Million Hours | |
| Topology: | Floating Gate | Drive Writes Per Day (DWPD): | 0.3 | |
| Dies per Chip: | 2 dies @ 512 Gbit | SLC Write Cache: | Yes | |
| Planes per Die: | 4 | Controller | ||
| Decks per Die: | 2 | Manufacturer: | InnoGrit | |
| Word Lines: | 106 per NAND String 90.6% Vertical Efficiency | Name: | IG5216 (Shasta+) | |
| Read Time (tR): | 87 µs | Architecture: | ARM 32-bit Cortex-R5 | |
| Program Time (tProg): | 800 µs | Foundry: | TSMC | |
| Block Erase Time (tBERS): | 15 ms | Flash Channels: | 4 | |
| Programming Throughput: | 84 MB/s | Core Count: | Dual-Core | |
| Endurance: (up to) | 3000 P/E Cycles (40000 in SLC Mode) | Process: | 28 nm | |
| Page Size: | 16 KB | |||
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